Researchers at the U.S. Department of Energy’s Berkeley Lab and University of California (UC) Berkeley have succeeded in creating a nanoscale transistor by successfully integrating ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate. Indium arsenide features superior electron mobility and velocity, which makes it an oustanding candidate for producing high-speed, low-power electronic devices in the future.
The researchers have created an ‘XOI’ or ‘compound semiconductor-on-insulator’ technology platform which is parallel to today’s ‘silicon-on-insulator’ platform (SOI).
The research got its partial funds through Intel Corporation as well. Read more at Medical daily.
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